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HGT1S3N60C3DS

Harris Corporation
Part Number HGT1S3N60C3DS
Manufacturer Harris Corporation
Title UFS Series N-Channel IGBT
Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar t...
Features
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and H...

Datasheet PDF File HGT1S3N60C3DS Datasheet 248.09KB

HGT1S3N60C3DS   HGT1S3N60C3DS   HGT1S3N60C3DS  




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