logo

HYG260P03LR1S

HUAYI
Part Number HYG260P03LR1S
Manufacturer HUAYI
Title P-Channel Enhancement Mode MOSFET
Description z -30V/-8A RDS(ON) = 21.6mΩ(typ.) @VGS =- 10V RDS(ON) = 42 mΩ(typ.) @VGS = -4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen Free and ...
Features escription z -30V/-8A RDS(ON) = 21.6mΩ(typ.) @VGS =- 10V RDS(ON) = 42 mΩ(typ.) @VGS = -4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen Free and Green Devices Available (RoHS Compliant) Pin Description SOP-8L Applications z Power Manage...

Datasheet PDF File HYG260P03LR1S Datasheet 973.81KB

HYG260P03LR1S   HYG260P03LR1S   HYG260P03LR1S  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map