| Part Number | HFP4N65 |
| Manufacturer | HUASHAN ELECTRONIC |
| Title | N-Channel Enhancement Mode Field Effect Transistor |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technolo... |
| Features |
• 4A, 650V(See Note), RDS(on) <2.9Ω@VGS = 10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant █ Maximum Ratings（Ta=25℃ unless otherwise specified） TO-220 1- G 2-D 3-S Tstg——Storage Temperature ----------------... |
| Datasheet |
 HFP4N65 Datasheet
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