| Part Number | HFP17N10 |
| Manufacturer | HUASHAN ELECTRONIC |
| Title | N-Channel Enhancement Mode Field Effect Transistor |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technolo... |
| Features |
• 17A, 100V, RDS(on) <70mΩ@VGS = 10 V • High density cell design for ultra low Rdson • Fast switching • 100% avalanche tested • Improved dv/dt capability █ Maximum Ratings（Ta=25℃ unless otherwise specified） TO-220 1- G 2- D 3- S Tstg——Storage Tempe... |
| Datasheet |
 HFP17N10 Datasheet 1.15MB |
