| Part Number | HPU650R1K1DN |
| Manufacturer | HUAJING MICROELECTRONICS |
| Title | Silicon N-Channel Power MOSFET |
| Description | HPU650R1K1DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve ... |
| Features |
l Superior switching performance l Low on resistance(Rdson≤1.1Ω) l Low gate charge (Typical Data:21.3nC) l Low reverse transfer capacitances(Typical:7.4pF) l 100% Single pulse avalanche energy test
Applications：
Power switch circuit of adaptor and ...
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| Datasheet |
 HPU650R1K1DN Datasheet 412.29KB |
