Part Number | HPD650R1K1DN |
Manufacturer | HUAJING MICROELECTRONICS |
Title | Silicon N-Channel Power MOSFET |
Description | HPD650R1K1DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve ... |
Features |
l Superior switching performance l Low on resistance(Rdson≤1.1Ω) l Low gate charge (Typical Data:21.3nC) l Low reverse transfer capacitances(Typical:7.4pF) l 100% Single pulse avalanche energy test
Applications:
Power switch circuit of adaptor and ...
|
Datasheet | HPD650R1K1DN Datasheet |