Part Number | HPA600R550DN |
Manufacturer | HUAJING MICROELECTRONICS |
Title | Silicon N-Channel Power MOSFET |
Description | HPA600R550DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve ... |
Features |
l Superior switching performance l Low on resistance(Rdson≤0.55Ω) l Low gate charge (Typical Data:27.3nC) l Low reverse transfer capacitances(Typical:32.1pF) l 100% Single pulse avalanche energy test
Applications:
Power switch circuit of adaptor an...
|
Datasheet |
![]() |