| Part Number | HM8810E |
| Manufacturer | H&M semi |
| Title | Dual N-Channel Enhancement Mode Power MOSFET |
| Description | The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This de... |
| Features |
● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram 8810 Marking and pin Assignment Mark... |
| Datasheet |
 HM8810E Datasheet 673.17KB |
