| Part Number | HM4806 |
| Manufacturer | H&M semi |
| Title | Dual N-Channel MOSFET |
| Description | The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appli... |
| Features |
● VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good ... |
| Datasheet |
 HM4806 Datasheet 579.02KB |
