| Part Number | HM4N10PR |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM4N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of app... |
| Features |
● VDS = 100V,ID = 4A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:140mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Applicati... |
| Datasheet |
 HM4N10PR Datasheet 487.56KB |
