| Part Number | HM4887 |
| Manufacturer | H&M Semiconductor |
| Title | Dual P-Channel Enhancement Mode Power MOSFET |
| Description | The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appli... |
| Features |
● VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) S1 S2 Schematic diagram ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Application ● Powe... |
| Datasheet |
 HM4887 Datasheet
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