| Part Number | HM2302BKR |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM2302BKR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.... |
| Features |
● RDS(ON)= 270 mΩ @VGS=4.5V ● RDS(ON)= 330 mΩ @VGS=2.5V ● RDS(ON)= 450 mΩ @VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding DSC N-Channe... |
| Datasheet |
 HM2302BKR Datasheet
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