| Part Number | HM2300DR |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM2300DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This d... |
| Features |
● VDS = 20V,ID = 8.0A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Battery protection ●Load switch ●Power management D G S Schema... |
| Datasheet |
 HM2300DR Datasheet
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