| Part Number | GSMDB2116S |
| Manufacturer | Globaltech |
| Title | N+P Dual-Channel MOSFET |
| Description | These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especia... |
| Features |
N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V
P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V
Fast switching Suit for -1.8V/1.8V Gate Drive Applications Green Device Available DFN2X2-6L package design
Applications
Notebook Load Switch Netw...
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| Datasheet |
 GSMDB2116S Datasheet 899.80KB |
