| Part Number | TIP112 |
| Manufacturer | GME |
| Title | NPN Epitaxial Silicon Darlington Transistor |
| Description | Production specification NPN Epitaxial Silicon Darlington Transisor TIP112 FEATURES Monolithic Construction With Built in Base -Emitter Shun... |
| Features |
Monolithic Construction With Built in Base -Emitter Shunt Resistors. Complementary to TIP117. Pb Lead-free High DC Current Gain:hFE=1000@VCE=4V,IC=1A. Low Collector-Emitter Saturation Voltage. Industrial Use. TO-220AB MAXIMUM RATING o... |
| Datasheet |
 TIP112 Datasheet 205.21KB |
