Part Number | BL1N60 |
Manufacturer | GME |
Title | N-Channel Power Mosfet |
Description | Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES RDS(ON) =9.3Ω@VGS = 10V. Pb Ultra Low gate charge (ty... |
Features |
RDS(ON) =9.3Ω@VGS = 10V. Pb Ultra Low gate charge (typical 5.0nC) Lead-free Low reverse transfer capacitance (CRSS = typical 3.0 pF) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness B... |
Datasheet | BL1N60 Datasheet |