| Part Number | FIR150N06PG |
| Manufacturer | First Semiconductor |
| Title | N-Channel Enhancement Mode Power Mosfet |
| Description | The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of a... |
| Features |
ƽ VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V
ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special proc...
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| Datasheet |
 FIR150N06PG Datasheet
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