| Part Number | FPDA200V |
| Manufacturer | Filtronic Compound Semiconductors |
| Title | HIGH PERFORMANCE PHEMT WITH SOURCE VIAS |
| Description | AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Trans... |
| Features |
♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization
FPDA200V
HIGH PERFORMANCE PHEMT WITH SOURCE VIAS
GATE BOND PAD
DRAIN BOND PAD
DIE SIZE: 15.6X...
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| Datasheet |
 FPDA200V Datasheet 57.52KB |
