| Part Number | HGTG30N60B3 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel IGBT |
| Description | HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining th... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ide...
|
| Datasheet |
 HGTG30N60B3 Datasheet 229.20KB |
