| Part Number | HGT1S12N60C3S |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel IGBT |
| Description | The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar tr... |
| Features |
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ...
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| Datasheet |
 HGT1S12N60C3S Datasheet
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