| Part Number | HGT1S12N60C3DS |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel IGBT |
| Description | HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS... |
| Features |
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is...
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| Datasheet |
 HGT1S12N60C3DS Datasheet
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