| Part Number | FDT86102LZ |
| Manufacturer | Fairchild Semiconductor |
| Title | MOSFET |
| Description | This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the ... |
| Features |
Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench technologies
Fast switching speed
100% UIL Test...
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| Datasheet |
 FDT86102LZ Datasheet
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