| Part Number | 13N06L |
| Manufacturer | Fairchild Semiconductor |
| Title | FQB13N06L |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This a... |
| Features |
• • • • • • • 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-P... |
| Datasheet |
 13N06L Datasheet 696.68KB |
