| Part Number | EMB17A03G |
| Manufacturer | Excelliance MOS |
| Title | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Description | Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 17mΩ ID 10A UIS,... |
| Features |
by maximum junction temperature. 2Duty cycle 1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
25 62.5
°C / W
2012/08/15
p.1
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TE...
|
| Datasheet |
 EMB17A03G Datasheet 193.77KB |
