| Part Number | PTB20080 |
| Manufacturer | Ericsson |
| Title | 25 Watts/ 1.6-1.7 GHz RF Power Transistor |
| Description | ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GH... |
| Features |
bove 25° C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC
Symbol
VCER VCBO VEBO IC PD
Value
50 50 4.0 3.4 123 0.7 150 1.43
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20080
Electrical Characteristics
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| Datasheet |
 PTB20080 Datasheet
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