| Part Number | EPC2019 |
| Manufacturer | EPC |
| Title | Power Transistor |
| Description | eGaN® FET DATASHEET EPC2019 – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 42 mΩ max ID , 8.5 A D G S EPC2019 EFFICIENT POWER CONVE... |
| Features |
tage VGS Gate-to-Source Voltage
6 V
-4
TJ Operating Temperature TSTG Storage Temperature
-40 to 150 °C
-40 to 150
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
2.7
RθJB Thermal Resistance, Junction-to-...
|
| Datasheet |
 EPC2019 Datasheet
|
