| Part Number | EPC2014 |
| Manufacturer | EPC |
| Title | Power Transistor |
| Description | eGaN® FET DATASHEET EPC2014 – Enhancement Mode Power Transistor VDSS , 40 V RDS(ON) , 16 mW ID , 10 A NEW PRODUCT EPC2014 EFFICIENT POWER CONV... |
| Features |
G Storage Temperature
-40 to 150 ˚C
-40 to 150
PARAMETER
TEST CONDITIONS
MIN
Static Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 125 µA
40
IDSS
Drain Source Leakage
VDS = 32 V, VGS = 0 V...
|
| Datasheet |
 EPC2014 Datasheet 1.06MB |
