Part Number | EPC2012C |
Manufacturer | EPC |
Title | Power Transistor |
Description | eGaN® FET DATASHEET EPC2012C – Enhancement Mode Power Transistor VDS , 200 V RDS (on) , 100 mΩ ID , 5 A D G S EPC2012C EFFICIENT POWER CONVERS... |
Features |
Power Transfer
Benefits • Ultra High Efficiency • Ultra Low RDS(on) • Ultra Low QG • Ultra Small Footprint Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 4.2 RθJB Thermal Resistance, Junction-to-Board 12.... |
Datasheet |
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