| Part Number | EPC2012 |
| Manufacturer | EPC |
| Title | Power Transistor |
| Description | eGaN® FET DATASHEET EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 100 mW ID , 3 A NEW PRODUCT EPC2012 EFFICIENT POWER CON... |
| Features |
atic Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 60 µA
200
IDSS
Drain Source Leakage
VDS = 160 V, VGS = 0 V
Gate-Source Forward Leakage
IGSS
Gate-Source Reverse Leakage
VGS = 5 V VGS = -...
|
| Datasheet |
 EPC2012 Datasheet 1.54MB |
