| Part Number | EPC2010 |
| Manufacturer | EPC |
| Title | Power Transistor |
| Description | eGaN® FET DATASHEET EPC2010 – Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 25 mW ID , 12 A NEW PRODUCT EPC2010 EFFICIENT POWER CON... |
| Features |
tatic Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 200 µA
200
IDSS
Drain Source Leakage
VDS = 160 V, VGS = 0 V
Gate-Source Forward Leakage IGSS
Gate-Source Reverse Leakage
VGS = 5 V VGS = -...
|
| Datasheet |
 EPC2010 Datasheet
|
