Part Number | EPC2007 |
Manufacturer | EPC |
Title | Power Transistor |
Description | eGaN® FET DATASHEET EPC2007 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 30 mW ID , 6 A NEW PRODUCT EPC2007 EFFICIENT POWER CONV... |
Features |
TG Storage Temperature
-40 to 125 ˚C
-40 to 150
PARAMETER
TEST CONDITIONS
MIN
Static Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 75 µA
100
IDSS
Drain Source Leakage
VDS = 80 V, VGS = 0 ...
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Datasheet | EPC2007 Datasheet |