| Part Number | GP801DDS18 |
| Manufacturer | Dynex Semiconductor |
| Title | Dual Switch Low VCE(SAT) IGBT Module |
| Description | GP801DDS18 GP801DDS18 Dual Switch Low VCE(SAT) IGBT Module Replaces January 2000 version, DS235-3.0 DS5235-4.1 January 2001 FEATURES s s s s s ... |
| Features |
s s s s s
Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 800A 1600A
APPLICATIONS
s s s s
12(C2) 2(C2) 4(E2) 1...
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| Datasheet |
 GP801DDS18 Datasheet
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