| Part Number | MID32C |
| Manufacturer | Dc Components |
| Title | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
| Description | Designed for use in general purpose amplifier and switching applications. TO-251 Pinning 1 = Base 2 = Collector 3 = Emitter .268(6.80) .252(6.4... |
| Features |
cified)
Symbol BVCBO BVCEO ICES ICEO IEBO VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle 2%
(1)
Min -100 -100 25 10 3
Typ -
Max -20 -50 -1 -1.2 -1.8 50 -
Unit V V µA µA mA V V MHz
Test Conditions IC=-1mA, IE=0 IC=-30mA, IB=0 VCE=-100V, VBE=0 V...
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| Datasheet |
 MID32C Datasheet
|
