Part Number | CGHV60075D5 |
Manufacturer | Cree |
Title | GaN HEMT Die |
Description | CGHV60075D5 75 W, 6.0 GHz, GaN HEMT Die Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior p... |
Features |
• 19 dB Typical Small Signal Gain at 4 GHz • 17 dB Typical Small Signal Gain at 6 GHz • 65% Typical Power Added Efficiency at 4 GHz • 60% Typical Power Added Efficiency at 6 GHz • 75 W Typical PSAT • 50 V Operation • High Breakdown Voltage • ... |
Datasheet | CGHV60075D5 Datasheet |