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CGHV40030

Cree
Part Number CGHV40030
Manufacturer Cree
Title GaN HEMT
Description Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high g...
Features
• Up to 6 GHz Operation
• 30 W Typical Output Power

• 16 dB Gain Application circuit for 0.96 - 1.4 GHz

• 70% 50 V Efficiency Operation at PSAT Listing of Available Hardware Application Circuits / Demonstration Circuits Applicati...

Datasheet PDF File CGHV40030 Datasheet

CGHV40030   CGHV40030   CGHV40030  




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