| Part Number | CGHV1J070D |
| Manufacturer | Cree |
| Title | GaN HEMT Die |
| Description | CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a si... |
| Features |
It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J070D
FEATURES
• 17 dB Typ. Small Signal Gain at 10 GHz • 60% Typ. PAE at 10 GHz • 70 W Typical Psat • 40 V Operation • ... |
| Datasheet |
 CGHV1J070D Datasheet 1.07MB |
