| Part Number | CGH60030D |
| Manufacturer | Cree |
| Title | GaN HEMT Die |
| Description | CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior prope... |
| Features |
APPLICATIONS
• 15 dB Typical Small Signal Gain at 4 GHz • 12 dB Typical Small Signal Gain at 6 GHz • 30 W Typical PSAT • 28 V Operation • High Breakdown Voltage • High Temperature Operation • Up to 6 GHz Operation • High Efficiency • 2-Wa... |
| Datasheet |
 CGH60030D Datasheet
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