| Part Number | CES2312 |
| Manufacturer | Chino-Excel Technology |
| Title | N-Channel MOSFET |
| Description | CES2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.5A, RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. High dense ... |
| Features |
20V, 4.5A, RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D
G
D G SOT-23 S
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-So...
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| Datasheet |
 CES2312 Datasheet
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