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BTD1782N3 CYStech General Purpose NPN Epitaxial Planar Transistor

Description The BTD1782N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA • High breakdown voltage, VCEO=80V (min.) • Complements to BTB1198N3 • Pb-free package Symbol BTD1782N3 Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Col...
Features
• Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA
• High breakdown voltage, VCEO=80V (min.)
• Complements to BTB1198N3
• Pb-free package Symbol BTD1782N3 Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Powe...

Datasheet PDF File BTD1782N3 Datasheet - 185.32KB

BTD1782N3  






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