| Part Number | CTL015NS10-R3 |
| Manufacturer | CT Micro |
| Title | N-Channel MOSFET |
| Description | The CTL015NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technol... |
| Features |
• Drain-Source Breakdown Voltage VDSS 105 V • Drain-Source On-Resistance RDS(ON) 230mΩ, at VGS= 10V, ID= 1.5A RDS(ON) 275mΩ, at VGS= 4.5V, ID= 1.0A ℃ • Continuous Drain Current at TA=25 ID =1.5A • Advanced high cell density Trench Technology • RoHS Co... |
| Datasheet |
 CTL015NS10-R3 Datasheet 532.95KB |
