| Part Number | CT3331-R3 |
| Manufacturer | CT Micro |
| Title | P-Channel MOSFET |
| Description | The CT3331-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchrono... |
| Features |
• Drain-Source Breakdown Voltage VDSS - 200 V • Drain-Source On-Resistance RDS(ON) 2.3Ω, at VGS= - 10V, IDS= - 0.2A RDS(ON) 2.4Ω, at VGS= - 4.5V, IDS= - 0.2A ℃, • Continuous Drain Current at TA=25 ID = - 0.4A • Advanced high cell density Trench Techno... |
| Datasheet |
 CT3331-R3 Datasheet 2.50MB |
