| Part Number | CT2N7002E-R3 |
| Manufacturer | CT Micro |
| Title | N-Channel MOSFET |
| Description | The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technolo... |
| Features |
• Drain-Source Breakdown Voltage VDSS 60 V • Drain-Source On-Resistance RDS(ON) 4.15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.7Ω, at VGS= 5.0V, IDS= 500mA ℃ • Continuous Drain Current at TA=25 ,ID = 500mA • Advanced high cell density Trench Technology • Ro... |
| Datasheet |
 CT2N7002E-R3 Datasheet
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