Part Number | GTVA261701FA |
Manufacturer | CREE |
Title | Thermally-Enhanced High Power RF GaN on SiC HEMT |
Description | The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier appli... |
Features |
input matching, high efficiency, and a thermally-enhanced package with earless flange.
GTVA261701FA Package H-37265J-2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz
3GPP WCDMA sig...
|
Datasheet | GTVA261701FA Datasheet |