| Part Number | AFN9997 |
| Manufacturer | Alfa-MOS |
| Title | N-Channel Enhancement Mode MOSFET |
| Description | AFN9997, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are parti... |
| Features |
100V/8A,RDS(ON)= 120mΩ@VGS=10V 100V/6A,RDS(ON)= 125mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin Description ( TO-252-2L ) Application High Frequency Boost Converter LED Backlight for... |
| Datasheet |
 AFN9997 Datasheet 518.28KB |
