| Part Number | AFN1306 |
| Manufacturer | Alfa-MOS |
| Title | N-Channel Enhancement Mode MOSFET |
| Description | AFN1306, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are parti... |
| Features |
30V/1.5A,RDS(ON)=430mΩ@VGS=4.5V 30V/1.2A,RDS(ON)=580mΩ@VGS=2.5V 30V/0.6A,RDS(ON)=860mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design
Application
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| Datasheet |
 AFN1306 Datasheet
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