| Part Number | AT12017-21 |
| Manufacturer | Advanced Semiconductor |
| Title | SILICON ABRUPT VARACTOR DIODE |
| Description | The AT12017-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic. PACKAGE S... |
| Features |
INCLUDE:
• High Tuning Ratio, ∆CT = 9.5 MIN. • High Quality Factor, Q = 300 MIN. • Hermetic Package, CP = .20 pF LS = .42 nH MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W O O O O CH... |
| Datasheet |
 AT12017-21 Datasheet 48.44KB |
