| Part Number | 1N415E |
| Manufacturer | Advanced Semiconductor |
| Title | SILICON MIXER DIODE |
| Description | The ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23 FEATURES: • High burnout... |
| Features |
• High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG 20 mA 1.0 V 2.0 (ERGS) @ TC = 25 °C -55 °C to +150 °C -55 °C to +150 °C NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω TC = ... |
| Datasheet |
 1N415E Datasheet
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