Part Number | AP6618M |
Manufacturer | Advanced Power Electronics |
Title | N-Channel MOSFET |
Description | D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-re... |
Features |
aracteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
2
Min. 30 1 -
Typ. 0.02 13 8.4 2.1 4.7 6 5.2 18.8 4.4 645 150 95
Max. Units 30 50 3 1 25 ±100 13 ...
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Datasheet | AP6618M Datasheet 71.64KB |