| Part Number | 1N831 |
| Manufacturer | ASI |
| Title | SILICON MIXER DIODE |
| Description | The ASI 1N831 is a Silicon Mixer Diode Designed for Applications Operating From 2.0 to 4.0 GHz. FEATURES: • High burnout resistance • Low noise f... |
| Features |
• High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS IF 20 mA VR 1.0 V PDISS 2.0 (ERGS) @ TC = 25 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C PACKAGE STYLE DO- 7 NONE CHARACTERISTICS TC = 25 °C SYM... |
| Datasheet |
 1N831 Datasheet
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