Part Number | SSC8362GS1 |
Manufacturer | AFSEMI |
Title | Dual N-Channel Enhancement Mode MOSFET |
Description | This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-st... |
Features |
VDS 60V
VGS ±20V
RDSon TYP 30mR@10V 35mR@4V5
ID 6.5A
General Description This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This dev... |
Datasheet | SSC8362GS1 Datasheet |